features marking: 1 h igh diode semiconductor sot- 23 ?? ? electrical characteristics (ta =25 unless otherwise specified a3 1ss1 81 swi tching diodes sot-23 plastic-encap sulate diodes low forward voltage fast reverse recovery time 1 2 3 1 2 3 no n -repetitive peak r everse v oltage v rm 85 v dc blo cking voltage v r 80 v for w ard continuous current i fm 300 ma a v erage rectified output current i o 100 ma po w er dissipation p d 150 mw unc tion t emperature t j 150 f o r ward s urge c urrent @ t =8.3 ms i fsm 2.0 a no n -repetitive peak parameter symbol limit unit s t orage t emperature r ange t st g -55 ~+ 150 t h ermal resistance from junction to ambient r ja /w 833 para mete r symbol min typ max unit conditions re v erse b reakdown v oltage v (b r) 80 v i r = 100 a v f1 0.61 v i f =1 ma v f2 0.74 v i f = 10ma for w ard voltage v f3 0.92 1.2 v i f = 100ma i r1 0.1 ua v r = 30v re v erse current i r2 0.5 ua v r = 80v cap acit ance between terminals c t 2.2 4.0 pf v r =0,f=1mhz re v erse recovery time t r r 1.6 4.0 ns i f =i r = 10ma,i rr =0. 1 i r applications ?? extreme fast switches
h l j k ' l r g h 6 h p l f r q g x f w r u 7 \ s l f d o & k d u d f w h u l v w l f v 0 25 50 75 100 125 150 0 50 100 150 200 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 100 020406080 1 10 100 1000 0 5 10 15 20 0.8 0.9 1.0 1.1 1.2 forward characteristics reverse characteristics power derating curve power dissipation p d (mw) ambient temperature ta ( ) 30 0.03 0.3 3 300 t a = 1 0 0 t a = 2 5 forward current i f (ma) forward voltage v f (v) ta=100 ta=25 reverse current i r (na) reverse voltage v r (v) 30 3 ta=25 f=1mhz capacitance characteristics reverse voltage v r (v) capacitance between terminals c t (pf)
jshd jshd h l j k ' l r g h 6 h p l f r q g x f w r u package outline dimensions sot-23 suggested pad layout sot-23
4 reel taping specifications for surface mount devices-sot-23 h igh diode semiconductor 30
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